JDH2S01T
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01T
UHF Band Mixer
路
Suitable for reducing set鈥檚 size as a result from enabling high-density
mounting due to 2-pin small packages.
Unit: mm
Maximum Ratings
(Ta
=
25擄C)
Characteristics
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V
RM
I
F
T
j
T
stg
Rating
5
30
125
-55~125
Unit
V
mA
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
1-1H1A
Electrical Characteristics
(Ta
=
25擄C)
Characteristics
Forward voltage
Forward current
Reverse current
Capacitance
Symbol
V
F
I
F
I
R
C
T
I
F
=
2 mA
V
F
=
0.5 V
V
R
=
0.5 V
V
R
=
0.2 V, f
=
1 MHz
Test Condition
Weight: 0.0013 g (typ.)
Min
戮
30
戮
戮
Typ.
0.25
戮
戮
0.6
Max
戮
戮
25
戮
Unit
V
mA
mA
pF
Note: Signal level when capacitance is measured: Vsig
=
20 mVrms
Marking
1
2003-03-24
1
2
3
