INCH-POUND
The documentation process conversion
measures necessary to comply with this
revision shall be completed by 28 March 1998
MIL-PRF-19500/613A
28 December 1997
SUPERSEDING
MIL-S-19500/613
30 July 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,
TYPE 2N7373, JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power
switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-254AA).
1.3 Maximum ratings.
PT 1/
Type
TA = +25
q
C
W
PT 2/
TC = +25
q
C
W
VCBO
VCEO
VEBO
IC
IC
3/
TJ and TSTG
V dc
V dc
V dc
A dc
A dc
q
C
1/
2/
3/
4/
2N7373
4
58
100
8.5
5.0
5.0
10
-65 to +200
Derate linearly 22.8 mW/
q
C for T
A
> +25
q
C.
Derate linearly 331 mW/
q
C for T
C
> +25
q
C.
This value applies for PW
d
8.3 ms, duty cycle
d
1%.
This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit of
figure 1.
1.4 Primary electrical characteristics.
hFE2
|hfe|
VBE(SAT)2 1/
VCE(SAT)2 1/
Cobo
R
T
JA
R
T
JC
VCE = 5.0 V dc
IC = 2.5 A dc
VCE = 5.0 V dc
IC = 500 mA dc
f = 10 MHz
IC = 5.0 A dc
IB = 500 mA dc
IC = 5.0 A dc
IB = 500 mA dc
VCB = 10 V dc
IE = 0 A dc
f = 1 MHz
pF
250
V dc
Min
70
Max
200
1/ Pulse (see 4.5.1).
7.0
2.2
V dc
1.5
q
C/W
88
q
C/W
3
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end
of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961