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JANTXV2N6800 Datasheet

  • JANTXV2N6800

  • POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)

  • 6頁(yè)

  • IRF

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Provisional Data Sheet No. PD-9.432B
HEXFET
廬
JANTX2N6800
POWER MOSFET
JANTXV2N6800
[REF:MIL-PRF-19500/557]
[GENERIC:IRFF330]
N-CHANNEL
Product Summary
Part Number
JANTX2N6800
JANTXV2N6800
BV
DSS
400V
R
DS(on)
1.0鈩?/div>
I
D
3.0A
400 Volt, 1.0鈩?HEXFET
鈩?/div>
HEXFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Features:
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = 10V, TC = 25擄C Continuous Drain Current
I D @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聦
PD @ TC = 25擄C
VGS
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
0.98 (typical)
JANTX2N6800, JANTXV2N6800
Units
3.0
2.0
12.0
25
0.20
鹵20
4.0
-55 to 150
o
A
W
W/K
聬
V
V/ns
C
g
To Order

JANTXV2N6800 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • Military, MIL-PRF-19500/557

  • 散裝

  • 停產(chǎn)

  • N 通道

  • MOSFET（金屬氧化物）

  • 400 V

  • 3A（Tc）

  • 10V

  • 1.1 歐姆 @ 3A，10V

  • 4V @ 250μA

  • 34.75 nC @ 10 V

  • ±20V

  • -

  • -

  • 800mW（Ta），25W（Tc）

  • -55°C ~ 150°C（TJ）

  • 通孔

  • TO-205AF（TO-39）

  • TO-205AF 金屬罐

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