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JANTXV2N6766 Datasheet

  • JANTXV2N6766

  • POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A)

  • 6頁(yè)

  • IRF

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Provisional Data Sheet No. PD-9.338D
HEXFET
廬
JANTX2N6766
POWER MOSFET
JANTXV2N6766
[REF:MIL-PRF-19500/543]
[GENERIC:IRF250]
N-CHANNEL
Product Summary
Part Number
JANTX2N6766
JANTXV2N6766
BV
DSS
200V
R
DS(on)
0.085鈩?/div>
I
D
30A
鈩?/div>
200 Volt, 0.085鈩?HEXFET
HEXFET technology is the key to International Rectifier鈥檚
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Features:
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = 10V, TC = 25擄C Continuous Drain Current
ID @ VGS = 10V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
聦
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聧
Avalanche Current
聦
Repetitive Avalanche Energy
聦
Peak Diode Recovery dv/dt
聨
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6766, JANTXV2N6766
Units
30
19
120
150
1.2
鹵20
500
30
15
5.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
A
W
W/K
聬
V
mJ
A
mJ
V/ns
o
C
g
To Order

JANTXV2N6766 產(chǎn)品屬性

  • 0現(xiàn)貨

  • 停產(chǎn)

  • Military, MIL-PRF-19500/543

  • 散裝

  • 停產(chǎn)

  • N 通道

  • MOSFET（金屬氧化物）

  • 200 V

  • 30A（Tc）

  • 10V

  • 90 毫歐 @ 30A，10V

  • 4V @ 250μA

  • 115 nC @ 10 V

  • ±20V

  • -

  • -

  • 4W（Ta），150W（Tc）

  • -55°C ~ 150°C（TJ）

  • 通孔

  • TO-3

  • TO-204AE

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