TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/498
Devices
2N6306
2N6308
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
2N6306 2N6308
Collector-Emitter Voltage
250
350
V
CEO
Collector-Base Voltage
500
700
V
CBO
Emitter-Base Voltage
8.0
V
EBO
Collector Current
8.0
I
C
Base Current
4.0
I
B
0 (1)
Total Power Dissipation
@ T
C
= +25 C
125
P
T
0 (1)
@ T
C
= +100 C
62.5
Operating & Storage Temperature Range
-65 to +200
T
op,
T
stg
0
0
1) Between T
C
= +25 C and T
C
= +175 C, linear derating factor average = 0.833 W/
0
C
Symbol
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
TO-3 (TO-204AA)*
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 500 Vdc; V
BE
= 1.5 Vdc
V
CE
= 700 Vdc; V
BE
= 1.5 Vdc
Collector-Emitter Cutoff Current
V
CE
= 250 Vdc
V
CE
= 350 Vdc
Emitter-Base Cutoff Current
V
EB
= 8 Vdc
2N6306
2N6308
2N6306
2N6308
2N6306
2N6308
V
(BR)
CEO
250
350
5.0
5.0
50
50
5.0
Vdc
I
CEX
碌A(chǔ)dc
I
CEO
I
EBO
碌A(chǔ)dc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
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