TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/456
Devices
2N5302
2N5303
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
0 (1)
2N5302
60
60
5.0
30
2N5303
80
80
20
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/
0
C
0
C
Unit
C/W
@ T
A
= +25 C
@ T
C
= +100
0
C
(2)
Operating & Storage Junction Temperature Range
P
T
T
J
,
T
stg
Symbol
R
胃
JC
7.5
5.0
115
-65 to +200
Max.
0.875
TO-3*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.57 mW/
0
C for T
A
= +25
0
C
2) Derate linearly 1.14 W/
0
C for T
C
= +100
0
C
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 200 mAdc, I
B
= 0
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, I
B
= 0
V
CE
= 80 Vdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
BE
= 1.5 Vdc, V
CE
= 60 V
dc
V
BE
= 1.5 Vdc, V
CE
= 80 V
dc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
V
CE
= 80 Vdc
2N5302
2N5303
2N5302
2N5303
V
(BR)
CEO
60
80
10
10
5.0
5.0
5.0
5.0
5.0
Vdc
I
CEO
I
EBO
碌A(chǔ)dc
碌A(chǔ)dc
碌A(chǔ)dc
2N5302
2N5303
2N5302
2N5303
I
CEX
I
CBO
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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