The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 12 November 1999.
INCH-POUND
MIL-PRF-19500/518C(USAF)
12 August 1999
SUPERSEDING
MIL-S-19500/518B(USAF)
21 November 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPE 2N3766, 2N3767 JAN, JANTX, AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Three levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to T0-66).
1.3 Maximum ratings.
PT
TC = +25擄C 1/
W
2N3766
2N3767
25
25
VCBO
VCEO
VEBO
IB
IC
TOP and Tstg
擄C
-65 to +200
-65 to +200
Type
R
胃
JC
擄C/W
7
7
V dc
80
100
V dc
60
80
V dc
6
6
A dc
2
2
A dc
4
4
1/ Between TC = +25擄C and TC = +200擄C, linear derating factor (average) = 143 m/W擄C.
1.4 Primary electrical characteristics.
hFE2 1/
VCE = 10 V dc
IC = 1 A dc
Min
2N3766
2N3767
20
20
Max
hFE3 1/
VCE = 5 V dc
IC = 500 mA dc
Min
40
40
Max
160
160
Cobo
VCB = 10 V dc
IE = 0
0.1 MHz
鈮?/div>
f
鈮?/div>
1 MHz
Min
Max
PF
pF
50
50
錚
fe
錚?/div>
VCE = 10 V dc
IC = 500 mA dc
f = 10 MHz
Max
Min
1
1
8
8
VBE(sat)
IC = 1 A dc
IB = 0.1 A dc
Min
V dc
Max
V dc
1.5
1.5
Type
1/ Pulsed (see 4.5.1).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad Street, Columbus, OH
43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or
by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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