JANSR2N7294
Formerly FRF250R4
June 1998
23A, 200V, 0.115 Ohm, Rad Hard,
N-Channel Power MOSFET
Description
The Intersil Corporation has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan-
nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25m鈩? Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard-
ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power
鏗乪ld effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to exhibit mini-
mal characteristic changes to total dose (GAMMA) and
neutron (n
o
) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.
Also available at other radiation and screening levels. See us
on the web, Intersil鈥?home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional informa-
tion.
Features
鈥?23A, 200V, r
DS(ON)
= 0.115鈩?/div>
鈥?Total Dose
- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)
鈥?Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
鈥?Photo Current
- 12nA Per-RAD(Si)/s Typically
鈥?Neutron
- Maintain Pre-RAD Speci鏗乧ations
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Ordering Information
PART NUMBER
JANSR2N7294
PACKAGE
TO-254AA
BRAND
JANSR2N7294
Symbol
D
Die family TA17652.
MIL-PRF-19500/605.
G
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package speci鏗乧ations.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright 漏 Intersil Corporation 2000.
File Number
4292.1
2-23
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