JANSR2N7281 Datasheet

IC型號(hào)：
JANSR2N7281
PDF描述：
Radiation Hardened, N-Channel Power MOSFET
文件大小：
49.95KB
芯片廠家：
Intersil

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JANSR2N7281

Formerly FRL430R4

Data Sheet

November 1998

File Number

4294

Radiation Hardened, N-Channel

Power MOSFET

The Intersil has designed a series of SECOND

GENERATION hardened power MOSFETs of both N-

Channel and P-Channel enhancement types with ratings

from 100V to 500V, 1A to 60A, and on resistance as low as

25m鈩? Total dose hardness is offered at 100K RAD (Si) and

1000K RAD (Si) with neutron hardness ranging from 1E13

for 500V product to 1E14 for 100V product. Dose rate

hardness (GAMMA DOT) exists for rates to 1E9 without

current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power

鏗乪ld effect transistor of the vertical DMOS (VDMOS)

structure. It is specially designed and processed to exhibit

minimal characteristic changes to total dose (GAMMA) and

neutron (n

) exposures. Design and processing efforts are

also directed to enhance survival to dose rate (GAMMA

DOT) exposure.

Also available at other radiation and screening levels. See us

on the web, Intersil鈥?home page: www.semi.intersil.com.

Contact your local Intersil Sales Of鏗乧e for additional

information.

Features

鈥?2A, 500V, r

DS(ON)

= 2.50鈩?/div>

鈥?Total Dose

- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)

鈥?Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

鈥?Photo Current

- 8nA Per-RAD (Si)/s Typically

鈥?Neutron

- Maintain Pre-RAD Speci鏗乧ations for 3E12

Neutrons/cm

- Usable to 3E13 Neutrons/cm

Symbol

Ordering Information

PART NUMBER

JANSR2N7281

PACKAGE

TO-205AF

BRAND

JANSR2N7281

Package

TO-205AF

Die family TA17635.

MIL-PRF-19500/604.

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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