JANSR2N7272 Datasheet

IC型號：
JANSR2N7272
PDF描述：
8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET
文件大小：
42.81KB
PDF頁數(shù)：
7頁
芯片廠家：
INTERSIL

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JANSR2N7272

Formerly FRL130R4

June 1998

8A, 100V, 0.180 Ohm, Rad Hard,

N-Channel Power MOSFET

Description

The Intersil Corporation,has designed a series of SECOND

GENERATION hardened power MOSFETs of both N-Chan-

nel and P-Channel enhancement types with ratings from

100V to 500V, 1A to 60A, and on resistance as low as

25m鈩? Total dose hardness is offered at 100K RAD (Si) and

1000K RAD (Si) with neutron hardness ranging from 1E13

for 500V product to 1E14 for 100V product. Dose rate hard-

ness (GAMMA DOT) exists for rates to 1E9 without current

limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power

鏗乪ld effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to exhibit mini-

mal characteristic changes to total dose (GAMMA) and

neutron (n

) exposures. Design and processing efforts are

also directed to enhance survival to dose rate (GAMMA

DOT) exposure.

Also available at other radiation and screening levels. See us

the

web,

Intersil鈥檚

home

page:

http://www.semi.harris.com. Contact your local Intersil

Sales Of鏗乧e for additional information.

Features

鈥?8A, 100V, r

DS(ON)

= 0.180鈩?/div>

鈥?Total Dose

- Meets Pre-RAD Speci鏗乧ations to 100K RAD (Si)

鈥?Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

- Typically Survives 2E12 if Current Limited to I

鈥?Photo Current

- 1.5nA Per-RAD(Si)/s Typically

鈥?Neutron

- Maintain Pre-RAD Speci鏗乧ations

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Ordering Information

PART NUMBER

JANSR2N7272

PACKAGE

TO-205AF

BRAND

JANSR2N7272

Die family TA17631.

MIL-PRF-19500/604.

Symbol

Package

TO-205AF

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

File Number

4297.2

2-3

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