0.056鈩?/div>
IRHF57Z30
JANSR2N7491T2
30V, N-CHANNEL
REF: MIL-PRF-19500/701
5
TECHNOLOGY
聶
I
D
QPL Part Number
12A* JANSR2N7491T2
12A* JANSF2N7491T2
12A* JANSG2N7491T2
12A* JANSH2N7491T2
TO-39
International Rectifier鈥檚 R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Identical Pre and Post Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
12
*
10
48
25
0.2
鹵20
520
12
2.5
3.0
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
www.irf.com
1
04/25/06