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JANSH2N7470T1 Datasheet

  • JANSH2N7470T1

  • RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254A...

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  • IRF

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PD-95838B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number Radiation Level R
DS(on)
I
D
IRHMS57064 100K Rads (Si) 0.0066鈩?45A*
IRHMS53064 300K Rads (Si) 0.0066鈩?45A*
IRHMS54064
500K Rads (Si)
0.0066鈩?45A*
IRHMS58064 1000K Rads (Si)
IRHMS57064
JANSR2N7470T1
60V, N-CHANNEL
REF: MIL-PRF-19500/698
5

TECHNOLOGY
聶
QPL Part Number
JANSR2N7470T1
JANSF2N7470T1
JANSG2N7470T1
0.0066鈩?45A* JANSH2N7470T1
Low-Ohmic
TO-254AA
International Rectifier鈥檚 R5
TM
technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
脌
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
45*
45*
180
208
1.67
鹵20
824
45
20
4.3
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
www.irf.com
1
07/24/06

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