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JANSH2N7394D Datasheet

  • JANSH2N7394D

  • Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Ele...

  • 8頁

  • IRF

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PD-90884D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-1)
Product Summary
Part Number
IRHN7054
IRHN3054
IRHN4054
IRHN8054
Radiation Level
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
IRHN7054
JANSR2N7394U
60V, N-CHANNEL
REF: MIL-PRF-19500/603
RAD-Hard HEXFET
TECHNOLOGY
鈩?/div>
廬
R
DS(on)
I
D
QPL Part Number
0.027鈩?35A JANSR2N7394U
0.027鈩?35A JANSF2N7394U
0.027鈩?35A JANSG2N7394U
0.040鈩?35A JANSH2N7394U
SMD-1
International Rectifier鈥檚 RAD-Hard
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TM
HEXFET
廬
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Surface Mount
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C Continuous Drain Current
ID @ VGS = 12V, TC = 100擄C Continuous Drain Current
IDM
Pulsed Drain Current
脌
PD @ T C = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
脕
Avalanche Current
脌
Repetitive Avalanche Energy
脌
Peak Diode Recovery dv/dt
脗
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
For footnotes refer to the last page
300 (5sec)
2.6 (Typical)
35
30
283
150
1.2
鹵20
500
35
15
3.5
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
05/15/06

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