JANSF2N7426U Datasheet

IC型號(hào)：
JANSF2N7426U
PDF描述：
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
文件大?。?/label>
119.85KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
IRF

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PD - 93969

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number Radiation Level

IRHNA9260

100K Rads (Si)

IRHNA93260 300K Rads (Si)

DS(on)

0.154鈩?/div>

-29A

IRHNA9260

JANSR2N7426U

200V, P-CHANNEL

REF: MIL-PRF-19500/655

RAD-Hard

鈩?/div>

HEXFET

TECHNOLOGY

廬

QPL Part Number

JANSR2N7426U

JANSF2N7426U

SMD-2

International Rectifier鈥檚 RAD-Hard

MOSFET technology provides high performance

power MOSFETs for space applications. This tech-

nology has over a decade of proven performance

and reliability in satellite applications. These de-

vices have been characterized for both Total Dose

and Single Event Effects (SEE). The combination

of low R

DS(on)

and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These de-

vices retain all of the well established advantages

of MOSFETs such as voltage control, fast switch-

ing, ease of paralleling and temperature stability

of electrical parameters.

HEXFET

廬

Features:

Single Event Effect (SEE) Hardened

Ultra Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = -12V, TC = 25擄C

ID @ VGS = -12V, TC = 100擄C

IDM

PD @ TC = 25擄C

VGS

EAS

IAR

EAR

dv/dt

T STG

Continuous Drain Current

Pulsed Drain Current

鉃€

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

鉃€

Repetitive Avalanche Energy

鉃€

Peak Diode Recovery dv/dt

鉃?/div>

Operating Junction

Storage Temperature Range

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

3.3 (Typical)

鉃?/div>

-29

-18

-116

300

2.4

鹵20

500

-29

-20

-55 to 150

Pre-Irradiation

Units

W/擄C

V/ns

For footnotes refer to the last page

www.irf.com

11/21/00

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