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JANSF2N7262U Datasheet

  • JANSF2N7262U

  • 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in ...

  • 12頁

  • ETC

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PD - 90713E
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level
IRHE7230
100K Rads (Si)
IRHE3230
300K Rads (Si)
IRHE4230
IRHE8230
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.35鈩?/div>
0.35鈩?/div>
0.35鈩?/div>
0.35鈩?/div>
I
D
5.5A
5.5A
5.5A
5.5A
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
廬
鈩?/div>
RAD-Hard HEXFET
MOSFET
TECHNOLOGY
QPL Part Number
JANSR2N7262U
JANSF2N7262U
JANSG2N7262U
JANSH2N7262U
LCC - 18
International Rectifier鈥檚 RADHard HEXFET
廬
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25擄C
ID @ VGS = 12V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
For footnotes refer to the last page
300 ( for 5s)
0.42 (Typical)
5.5
3.5
22
25
0.2
鹵20
240
鈥?/div>
鈥?/div>
5.0
-55 to 150
Pre-Irradiation
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
02/01/01

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