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JANS2N7236 Datasheet

  • JANS2N7236

  • POWER MOSFET THRU-HOLE (TO-254AA)

  • 7頁

  • IRF

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PD - 90495G
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFM9140
R
DS(on)
0.20鈩?/div>
I
D
-18A
IRFM9140
JANTX2N7236
JANTXV2N7236
JANS2N7236
REF:MIL-PRF-19500/595
100V, P-CHANNEL
HEXFET
MOSFET TECHNOLOGY
廬
HEXFET
廬
MOSFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance.
HEXFET
tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET
transistor鈥檚 totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25擄C
ID @ VGS = -10V, TC = 100擄C
IDM
PD @ TC = 25擄C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-18
-11
-72
125
1.0
鹵20
500
-18
12.5
-5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g
Units
A
W
W/擄C
V
mJ
A
mJ
V/ns
o
C
www.irf.com
1
09/22/03

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