0.30鈩?/div>
I
D
-6.5A
The HEXFET technology is the key to International
Rectifier鈥檚 advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
鈥淪tate of the Art鈥?design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
餂?/div>
TO-39
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25擄C
Continuous Drain Current
ID @ VGS = -10V, TC = 100擄C Continuous Drain Current
IDM
PD @ TC = 25擄C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Pulsed Drain Current
鉃€
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
鉃?/div>
Avalanche Current
鉃€
Repetitive Avalanche Energy
鉃€
Peak Diode Recovery dv/dt
鉃?/div>
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
-6.5
-4.1
-25
25
0.20
鹵20
92
鈥?/div>
鈥?/div>
-5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
W
W/擄C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
04/20/01
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