The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 13 March 1998.
INCH-POUND
MIL-PRF-19500/563E
13 December 1997
SUPERSEDING
MIL-S-19500/563D
31 March 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON
TYPES 2N6845, 2N6845U, 2N6847, AND 2N6847U
JAN, JANTX, JANTXV, JANS, JANHC AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, power
transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels
of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1, TO-205AF (formerly TO-39), 3 (LCC), and figures 4 and 5 for JANHCA and JANKC die
dimensions.
1.3 Maximum ratings. Unless otherwise specified, TA = +25
C.
Type
3/
PT 1/
PT
TC = +25
C TA = +25
C
W
2N6845
2N6847
20
20
W
0.8
0.8
VDS
VDG
VGS
ID1 2/
ID2 2/
TC = +25
C TC = +100
C
A dc
-4.0
-2.5
A dc
-2.6
-1.6
IS
IDM
TJ and
TSTG
V dc
-100
-200
V dc
-100
-200
V dc
A dc
-4.0
-2.5
A(pk)
-16
-10
C
-55 to +150
-55 to +150
20
20
1/ Derate linearly 0.16 W/
C for TC > +25
C.
TJ max - TC
PT =
R
JC
2/
I
D
=
( R
胃
JC
T
J
max
- T
C
x R
DS(on)
at T
J
max
)
3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961