The documentation and process conversion measures necessary to
comply with this document shall be completed by 16 May, 2002.
INCH-POUND
MIL-PRF-19500/301F
16 February, 2002
SUPERSEDING
MIL-PRF-19500/301E
4 October 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN SILICON, LOW-POWER
TYPE 2N918 AND 2N918UB
JAN, JANTX, JANTXV AND JANS, JANHC and JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the detail requirements for NPN, silicon, ultra-high frequency transistors.
Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500 and two levels of
product assurance are provided for unencapsulated devices.
1.2 Physical dimensions. See figure 1 (TO - 72), figure 2 for UB and figure 3 (JANHC and JANKC).
1.3 Maximum ratings.
Types
P
T
1/
T
A
= +25擄C
mW
2N918
2N918UB
200
200
V
CBO
V
CEO
V
EBO
I
C
T
STG
and T
J
擄C
-65 to +200
V dc
30
30
V dc
15
15
V dc
3.0
3.0
mA dc
50
50
1/ Derate linearly, 1.14 mW/擄C above T
A
= 25擄C
1.4 Primary electrical characteristics at T
A
= +25擄C.
Limit
NF
V
CE
= 6 V dc
I
C
= 1 mA dc
f = 60 MHz
g
s
= 2.5 mmho
DB
|h
FE
|
V
CE
= 10 V dc
I
C
= 4 mA dc
f = 100 MHz
r
b
' C
c
V
CB
= 10 V dc
I
E
= -4.0 mA dc
f = 79.8 MHz
C
obo
V
CB
= 10 V dc
I
E
= 0 mA dc
100 kHz
鈮鈮?
MHz
pF
G
pe
V
CB
= 12 V dc
I
C
= 6.0 mA dc
f = 200 MHz
ps
Minimum
Maximum
6.0
18.0
25
dB
15
1.7
6.0
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box
3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426)
appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961