TECHNICAL DATA
PNP DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/623
Devices
2N7371
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ T
C
= +25
0
C
(1)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
0
Value
100
100
5.0
0.2
12
100
-65 to +175
Max.
1.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Unit
0
C/W
TO-254AA*
1)
Derate linearly 0.667 W/ C above T
C
> +25 C
*See Appendix A for
package outline
0
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
CEO
(
sus
)
I
CEO
I
CEX
I
EBO
100
1.0
0.5
2.0
Vdc
mAdc
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
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120101
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