TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/538
Devices
2N6676
2N6678
2N6691
2N6693
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
2N6676 2N6678
2N6691 2N6693
300
400
450
650
450
650
8.0
5.0
15
2N6676 2N6691
2N6678 2N6693
6.0
(2)
3.0
(3)
175
175
-65 to +200
Max.
1.0
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
2N6676, 2N6678
TO-3 (TO-204AA)*
@ T
A
= 25
0
C
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
Total Power Dissipation
P
T
T
op;
T
stg
Symbol
R
胃
JC
W
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 1.0 W/
0
C for T
C
> 25
0
C
2) Derate linearly 34.2 mW/
0
C for T
A
> 25
0
C
3)
Derate linearly 17.1 mW/
0
C for T
A
> 25
0
C
0
2N6691, 2N6693
TO-61*
* See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 450 Vdc, V
BE
= 1.5 Vdc
V
CE
= 650 Vdc, V
BE
= 1.5 Vdc
2N6676, 2N6691
2N6678, 2N6693
2N6676, 2N6691
2N6678, 2N6693
V
(BR)
CEO
300
400
0.1
0.1
Vdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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