TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528
Devices
2N6032
2N6033
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Emitter-Base Voltage
Base Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
I
C
V
EBO
I
B
P
T
T
op
,
T
stg
2N6032
90
120
50
2N6033
120
150
40
Units
Vdc
Vdc
Adc
Vdc
Adc
W
0
@ T
C
= +25
0
C
(1)
7.0
10
140
-65 to +200
Max.
1.25
Operating & Storage Temperature Range
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
胃
JC
0
0
1) Derate linearly 800 mW/ C between T
C
= 25 C and T
C
= 200
0
C
Unit
0
C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, V
EB
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
V
CB
= 150 Vdc
Collector-Emitter Cutoff Current
V
CE
= 110 Vdc, V
BE
=-1.5 Vdc
V
CE
= 135 Vdc, V
BE
=-1.5 Vdc
2N6032
2N6033
2N6032
2N6033
2N6032
2N6033
2N6032
2N6033
2N6032
2N6033
V
(BR)
CEO
90
120
110
140
120
150
25
25
12
10
Vdc
V
(BR)
CER
Vdc
V
(BR)
CEX
Vdc
I
CBO
mAdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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