TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/466
Devices
2N5683
2N5684
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
(1)
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
0
2N5683
60
60
2N5684
80
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
*See appendix A for
package outline
@ T
C
= 25
0
C
@ T
C
= 100
0
C
Operating & Storage Junction Temperature Range
5.0
15
50
300
171
-65 to +200
Max.
0.584
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
R
胃
JC
Derate linearly 1.715 W/ C between T
C
= +25 C and T
C
= +200
0
C
0
0
TO-3*
(TO-204AA)
1)
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
V
CE
= 40 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
2N5683
2N5684
2N5683
2N5684
2N5683
2N5684
2N5683
2N5684
V
(BR)
CEO
60
80
5.0
5.0
5.0
5.0
5.0
5.0
5.0
Vdc
I
CEO
碌A(chǔ)dc
I
CEX
碌A(chǔ)dc
I
CBO
I
EBO
碌A(chǔ)dc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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