TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/454
Devices
2N5660
2N5661
2N5662
2N5663
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
@ T
A
= +25
0
C
@ T
C
= +100
0
C
Operating & Storage Junction Temperature Range
Total Power Dissipation
P
T
T
J
,
T
stg
2N5660
2N5661
5.0
87.5
2N5660 2N5661
2N5662 2N5663
200
300
250
400
250
400
6.0
0.5
2.0
2N5660 2N5662
2N5661 2N5663
2.0
(1)
1.0
(2)
(3)
20
15
(4)
-65 to +200
2N5662
2N5663
6.67
145.8
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
TO-66*
(TO-213AA)
2N5660, 2N5661
W
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1)
2)
3)
0
Symbol
R
胃
JC
0
Unit
0
C/W
4)
R
胃
JA
Derate linearly 11.4 mW/ C for T
A
>+ 25 C
Derate linearly 5.7 mW/
0
C for T
A
> +25
0
C
Derate linearly 200 mW/
0
C for T
C
> +100
0
C
Derate linearly 150 mW/
0
C for T
C
> +100
0
C
TO-5*
2N5662, 2N5663
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Breakdown Voltage
I
C
= 10 mAdc, R
BE
= 100鈩?/div>
Emitter-Base Breakdown Voltage
I
E
= 10
碌A(chǔ)dc
2N5660, 2N5662
2N5661, 2N5663
2N5660, 2N5662
2N5661, 2N5663
V
(BR)
CEO
200
300
250
400
6.0
Vdc
V
(BR)
CER
V
(BR)
EBO
Vdc
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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