TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
Devices
2N5152
2N5152L
2N5154
2N5154L
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C(3, 4)
0 (1)
All Units
80
100
5.5
2.0
1.0
11.8
-65 to +200
Max.
15
Units
Vdc
Vdc
Vdc
Adc
W
W
擄C
Unit
C/W
TO- 5*
2N5152L, 2N5154L
@ T
A
= +25 C
@ T
C
= +25
0
C
(2)
Operating & Storage Temperature Range
P
T
T
j
,
T
stg
Symbol
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/ C for T
A
> +25 C
2) Derate linearly 66.7 mW/
0
C for T
C
> +25
0
C
3) Derate linearly 80 mW/
0
C for T
C
> +25
0
C
4) This value applies for P
W
鈮?/div>
8.3 ms, duty cycle
鈮?/div>
1%
0
0
R
胃
JC
0
2N5152, 2N5154
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(
BR
)
CEO
I
EBO
Min.
80
1.0
1.0
1.0
1.0
50
Max.
Unit
Vdc
碌A(chǔ)dc
mAdc
碌A(chǔ)dc
mAdc
碌A(chǔ)dc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0 Vdc, I
C
= 0
V
EB
= 5.5 Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 0
V
CE
= 100 Vdc, V
BE
= 0
Collector-Base Cutoff Current
V
CE
= 40 Vdc, I
B
= 0
I
CES
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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