The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 31 October 2001.
INCH-POUND
MIL-PRF-19500/534C
31 July 2001
SUPERSEDING
MIL-PRF-19500/534B
30 December 1997
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER
TYPES 2N5002, 2N5004, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in
high-speed power-switching applications. Four levels of product assurance are provided for each encapsulated
device type as specified in MIL-PRF-19500. Two levels of product assurance for each unencapsulated device type
die.
1.2 Physical dimensions. See figure 1 (T6-C, similar to T0-59) and figure 2 (die).
* 1.3 Maximum ratings.
P
T
(1)
T
A
= 25擄C
W
2
P
T
(2)
T
C
= 25擄C
W
58
V
CBO
V
CEO
V
EBO
I
C
I
C
(3)
Reverse
pulse
energy
mJ
15
T
stg
and T
J
V dc
100
V dc
80
V dc
5.5
A dc
5
A dc
10
擄C
-65 to +200
(1)
(2)
(3)
Derate linearly 11.4 mW/擄C for T
A
> 25擄C.
Derate linearly 331 mW/擄C for T
C
> 25擄C.
This value applies for Pw
鈮?/div>
8.3 ms, duty cycle
鈮?/div>
1 percent.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT. Approved for public release; distribution is unlimited.
FSC 5961
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