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JAN2N4405 Datasheet

  • JAN2N4405

  • TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-39

  • 11頁

  • ETC

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The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 3 February 2000.
INCH-POUND
MIL-PRF-19500/448B
3 February 1999
SUPERSEDING
MIL-S-19500/448A(USAF)
29 March 1993
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPE 2N4405
JAN, JANTX
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors. Two levels of product
assurance is provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See 3.3.
1.3 Maximum ratings.
Types
P
T
1/
T
C
= +25擄C
W
2N4405
5.0
P
T
2/
T
A
= +25擄C
W
1.0
V
CBO
V
CEO
V
EBO
I
C
T
STG
and T
OP
擄C
-55 to +200
V dc
80
V dc
80
V dc
5
A dc
0.5
1/ Derate linearly, 28.6 mW/擄C for T
C
鈮?/div>
+25擄C.
2/ Derate linearly, 5.72 mW/擄C for T
A
鈮?/div>
+25擄C.
1.4 Primary electrical characteristics at T
A
= 25擄C.
Limit
h
FE1
1/
V
CE
= 5 V dc
I
C
= 100
碌A
dc
h
FE3
1/
V
BE(SAT)2
1/
V
CE(SAT)3
1/
C
obo
V
CB
= 10 V dc
I
E
= 0 mA dc
100 kHz
鈮?/div>
f
鈮?
MHz
pF
2.0
6.0
|h
fe
|
V
CE
= 20 V dc
I
C
= 50 mA dc
f = 100 MHz
V
CE
= 5 V dc I
C
= 500 mA dc I
C
= 500 mA dc
I
C
= 150 mA dc I
B
= 50 mA dc I
B
= 50 mA dc
V dc
Min
Max
75
100
300
0.85
1.20
V dc
0.5
20
1/ Pulsed (see 4.5.1)
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961

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