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JAN2N3997 Datasheet

  • JAN2N3997

  • NPN POWER SWITCHING SILICON TRANSISTOR

  • 59.82KB

  • 2頁

  • MICROSEMI

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TECHNICAL DATA
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
Devices
2N3996
2N3997
2N3998
2N3999
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
@ T
A
= +25
0
C
(2)
@ T
C
= +100
0
C
(3)
Operating & Storage Junction Temperature Range
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
Value
80
100
8.0
0.5
5.0
10
(1)
2.0
30
-65 to +200
Max.
3.33
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) This value applies for t
p
鈮?/div>
1.0 ms, duty cycle
鈮?/div>
50%
2) Derate linearly 11.4 mW/
0
C for T
A
> +25
0
C
3) Derate linearly 300 mW/
0
C for T
C
> +100
0
C
Unit
0
C/W
TO-111*
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CBO
I
CEO
I
CES
I
EBO
Min.
80
100
10
200
200
10
Max.
Unit
Vdc
Vdc
碌A(chǔ)dc
畏Adc
畏Adc
碌A(chǔ)dc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 50 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 10
碌A(chǔ)dc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 0
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 8.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JAN2N3997 產(chǎn)品屬性

  • 0現(xiàn)貨查看交期

  • 100 : ￥1,145.97840散裝

  • Military, MIL-PRF-19500/374

  • 散裝

  • 在售

  • NPN

  • 10 A

  • 80 V

  • 2V @ 500mA，5A

  • 10μA

  • 80 @ 1A，2V

  • 2 W

  • -

  • -65°C ~ 200°C（TJ）

  • 底座，接線柱安裝

  • TO-111-4，接線柱

  • TO-111

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