JAN2N388 Datasheet

IC型號：
JAN2N388
PDF描述：
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-5
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MIL-S-19500/65B

19 March 1970

SUPERSEDING

MIL.S.19500/65A

19 A@

MILfTARY

SEMICONDUCTOR

SPECIFICATION

NPN, GERMANIUM,

SWITCHING

1963

DEVICE, TRANSISTOR,

TYPE 2N3BS

This

specification

mundalcvy

for

by all De-

of Defense.

partnmnk

1. SCOPE

1.1 Scope.

transistor.

1.2 PhysicaJ dimemions.

1.3 Maximum ratingn.

This

and A~mcics

of the Department

specification

covers the detnil requirements

for n NPN, germanium,

low-power

switching

See figure 1 (TO.5)

fq.

150

Vcflo

,fdc

VCER

Vdc

鈥?0

VEBO

Vdc

mAdc

200

Tstg

鈥渃

.65 tO+100

1/ Dmate linearly 2 mW~

for TA >25鈥?/div>

1.4 Primary electrical chnmcteristk-x.

Limih

Cobo

VCB = 6 Vdc

lE=I)

100 kHz <f<lMHz

fbfh

VCB = 6 Vdc

]E = 1 rnAdc

bf7E

VCE = 0.5 Vdc

[C= 30 mAdc

ton

*UIIZ

180

wec

psec

0.7

Min

Max

0.7

2. APPLICABLE

DOCUMENTS

for bids or request for proposal,

2.1 The following documents, of the issue i鈥?effect on date of invitation

form a part of the apecificntion to the extent specified herein.

FSC 5961

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