TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/412
Devices
2N3846
2N3847
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
op,
T
stg
Symbol
R
胃
JC
2N3846
200
300
2N3847
300
400
Units
Vdc
Vdc
Vdc
Adc
W
W
0
C
Unit
C/W
@ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
Operating & Storage Temperature Range
10
20
4.0
150
-65 to +200
Max.
0.5
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 26.6 mW/ C to +175 C
2) Derate linearly 2 W/
0
C to +175
0
C
*See Appendix A for Package
Outline
0
0
TO-63*
0
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc; I
B
= 0
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc; V
BE
= 0
V
CE
= 400 Vdc; V
BE
= 0
Collector-Emitter Cutoff Current
V
CE
= 200 Vdc; I
B
= 0
V
CE
= 300 Vdc; I
B
= 0
Emitter-Base Cutoff Current
V
BE
= 10 Vdc; I
C
= 0
2N3846
2N3847
2N3846
2N3847
2N3846
2N3847
V
(BR)
CEO
200
300
2
2
5
5
250
Vdc
I
CES
mAdc
I
CEO
I
EBO
mAdc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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