TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/379
Devices
2N3791
2N3792
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
2N3791
60
60
2N3792
80
80
7.0
4.0
10
5.0
85.7
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
@ T
A
= +25
0
C
(1)
@ T
C
= +100
0
C
(2)
Operating & Storage Junction Temperature Range
-65 to +200
Max.
1.17
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
R
胃
JC
0
0
1) Derate linearly @ 28.57 mW/ C for T
A
> +25 C
2)
Derate linearly @ 0.857 mW/
0
C for T
C
> +100
0
C
0
Unit
C/W
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
V
CE
= 70 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
2N3791
2N3792
2N3791
2N3792
2N3791
2N3792
V
(BR)
CEO
60
80
5.0
5.0
5.0
5.0
Vdc
I
CES
mAdc
I
CEX
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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