TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762
2N3762L
2N3763
2N3763L
2N3764
2N3765
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3762*
2N3764
40
40
5.0
1.5
2N3763*
2N3765
60
60
Unit
Vdc
Vdc
Vdc
Adc
TO-39* (TO-205AD)
2N3762, 2N3763
2N3762*
1
2N3763*
Total Power Dissipation @ T
A
= +25
0
C
Operating & Storage Junction Temp. Range
P
T
T
op
,
T
stg
Symbol
1.0
2N3764
2
2N3765
0.5
W
0
-55 to +200
Max.
C
THERMAL CHARACTERISTICS
Characteristics
TO-5*
2N3762L, 2N3763L
Unit
2N3762*
2N3763*
2N3764
2N3765
TO-46* (TO-206AB)
2N3764, 2N3765
*See appendix A for
package outline
0
Thermal Resistance Junction-to-Case
60
88
C/W
R
胃
JC
*Electrical characteristics for 鈥淟鈥?suffix devices are identical to the 鈥渘on L鈥?corresponding devices
1) Derate linearly at 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly at 2.86 mW/
0
C for T
A
> +25
0
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 20 Vdc
V
CB
= 30 Vdc
V
CB
= 40 Vdc
V
CB
= 60 Vdc
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
2N3762, 2N3764
2N3763, 2N3765
V
(BR)
CEO
40
60
100
100
10
10
Vdc
I
CBO
畏Adc
碌A(chǔ)dc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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