TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3634*
2N3635*
140
140
2N3636*
2N3637*
175
175
Unit
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
Vdc
Vdc
5.0
Vdc
1.0
Adc
0 (1)
@ T
A
= +25 C
1.0
W
P
T
0 (2)
@ T
C
= +25 C
5.0
W
0
Operating & Storage Junction Temperature Range
-65 to +200
C
T
J
,
T
stg
*Electrical characteristics for 鈥淟鈥?suffix devices are identical to the 鈥渘on L鈥?corresponding devices
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 140 Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0 Vdc
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
2N3634, 2N3635
2N3636, 2N3637
V
(BR)
CEO
140
175
100
10
50
10
10
Vdc
畏Adc
碌A(chǔ)dc
畏Adc
碌A(chǔ)dc
碌A(chǔ)dc
I
CBO
2N3634, 2N3635
I
EBO
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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