TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/384
Devices
2N3584
2N3585
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
2N3584
250
375
300
2N3585
300
500
400
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
6.0
1.0
2.0
2.5
35
-65 to +200
Max.
5.0
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 14.85 mW/
0
C for T
A
> +25
0
C
2)
Derate linearly @ 200 mW/
0
C for T
C
> +25
0
C
TO-66* (TO-213AA)
0
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 10 mAdc
Collector-Base Breakdown Voltage
I
C
= 15 mAdc
Collector-Emitter Cutoff Current
V
CE
= 150 Vdc
Collector-Emitter Cutoff Current
V
CE
= 300 Vdc, V
BE
= 1.5 Vdc
V
CE
= 400 Vdc, V
BE
= 1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
2N3584
2N3585
2N3584
2N3585
V
(BR)
CEO
250
300
375
500
5.0
1.0
1.0
0.5
Vdc
V
(BR)
CER
Vdc
I
CEO
2N3584
2N3585
I
CEX
mAdc
mAdc
I
EBO
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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2N3584, 2N3585 JAN SERIES
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