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JAN2N3441 Datasheet

  • JAN2N3441

  • NPN POWER SILICON TRANSISTOR

  • 2頁(yè)

  • MICROSEMI

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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/369
Devices
2N3441
Qualified Level
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
CER
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
R
胃
JC
0
Value
140
160
150
7.0
2.0
3.0
3.0
25
-65 to +200
Max.
7.0
58.5
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
0
0
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
1)
TO-66* (TO-213AA)
2)
Derate linearly @ 17.1 mW/ C for T
A
> +25 C
Derate linearly @ 143 mW/
0
C for T
C
> +25
0
C
*See Appendix A for
Package Outline
0
R
胃
JA
C/W
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
V
(BR)
CER
V
(BR)
CEX
I
CEX
I
EBO
Min.
140
150
160
1.0
1.0
Max.
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
OFF CHARACTERISTICS
Collector-Emitter Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc, R
BE
= 100
鈩?/div>
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc, V
BE
= -1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 140 Vdc, V
BE
= -1.5 Vdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JAN2N3441 產(chǎn)品屬性

  • 0現(xiàn)貨查看交期

  • 100 : ￥1,798.26790散裝

  • Military, MIL-PRF-19500/369

  • 散裝

  • 在售

  • NPN

  • 3 A

  • 140 V

  • 1V @ 50mA，500mA

  • -

  • 25 @ 500mA，4V

  • 3 W

  • -

  • -65°C ~ 200°C（TJ）

  • 通孔

  • TO-213AA，TO-66-2

  • TO-66（TO-213AA）

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