INCH-POUND
The documentation and process conversion measures
necessary to comply with this document shall be completed
by 14 November, 2001.
MIL-PRF-19500/355H
14 August 2001
SUPERSEDING
MIL-PRF-19500/355G
30 June 2000
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, UNITIZED DUAL TRANSISTOR, NPN, SILICON
TYPES 2N2919, 2N2920, 2N2919L, 2N2920L, 2N2919U, AND 2N2920U,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for two electrically isolated, matched NPN
silicon transistors as one dual unit. Four levels of product assurance are provided for each device type as specified
in MIL-PRF-19500. Two levels of product assurance are provided for die.
* 1.2 Physical dimensions. See figure 1 (similar to T0-78), figure 2 (surface mount), figure 3 (JANHCA and
JANKCA die), figure 4 (JANHCB and JANKCB die).
1.3 Maximum ratings.
P
T
(1)
T
A
= +25
G
C
One
section
mW
300
Both
sections
mW
600
P
T
(2)
T
C
= +25
G
C
One
section
mW
750
Both
sections
W
1.25
mA dc
30
V dc
70
V dc
60
V dc
6
I
C
V
CBO
V
CEO
V
EBO
T
J
and T
STG
G
C
-65 to +200
* (1) For T
A
> +25
G
C, derate linearly 1.71 mW/
G
C, one section; 3.43 mW/
G
C, both sections.
* (2) For T
C
> +25
G
C, derate linearly 4.286 mW/
G
C, one section; 7.14 mW/
G
C, both sections.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC5961