The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 25 September 1999.
INCH-POUND
MIL-PRF-19500/225F
25 June 1999
SUPERSEDING
MIL-S-19500/225E
15 April 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON,
TYPES 2N1711, 2N1711S, 2N1890, 2N1890S,
JAN AND JANTX
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Two levels of product
assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See 3.3 (similar to TO-5).
1.3 Maximum ratings.
Type
1/
P
T
2/
T
C
= +25擄C
W
P
T
3/
T
A
= +25擄C
W
V
CBO
V dc
V
EBO
V dc
7
7
I
C
mA dc
500
500
V
CER
R
BE
= 10
鈩?/div>
V dc
50
80
T
J
and T
STG
擄C
-65 to +200
-65 to +200
2N1711
3.0
0.8
75
2N1890
3.0
0.8
100
1/ Also applies to the corresponding "S" suffix device.
2/ Derate linearly at 17.2 mW/擄C for T
C
> +25擄C.
3/ Derate linearly at 4.57 mW/擄C for T
A
> +25擄C.
1.4 Primary electrical characteristics.
Limits
h
FE1
1/
h
FE2
1/
V
CE
= 10 V dc
I
C
= 10
碌A(chǔ)
dc
V
CE
= 10 V dc
I
C
= 150 mA dc
|h
fe
|
f = 20 MHz
V
CE
= 10 V dc
I
C
= 50 mA dc
V
CE(SAT)
2N1711 2/
I
C
= 150 mA dc
I
B
= 50 mA dc
V dc
0.2
1.5
2N1890 2/
I
C
= 50 mA dc
I
B
= 5.0 mA dc
V dc
0.2
1.2
Min
Max
20
100
300
3.5
12
1/ Pulsed (see 4.5.1).
2/ Also applies to the corresponding "S" suffix device.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
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