J/SST111 SERIES
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
FAST SWITCHING
ABSOLUTE MAXIMUM RATINGS
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation (J)
Continuous Power Dissipation (SST)
Maximum Currents
Gate Current
Maximum Voltages
Gate to Drain
Gate to Source
-35V
-35V
50mA
360mW
350mW
-55 to 150擄C
-55 to 135擄C
D S G
1 2 3
TO 92
1
SINGLE N-CHANNEL JFET
5pA
4ns
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
D
S
1
3
2
G
STATIC ELECTRICAL CHARACTERISTICS @25 擄C (unless otherwise stated)
SYM.
BV
GSS
V
GS(off)
V
GS(F)
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
CHARACTERISTIC
Gate to Source Breakdown Voltage
Gate to Source Cutoff Voltage
Gate to Source Forward Voltage
Drain to Source Saturation Current
2
Gate Leakage Current
Gate Operating Current
Drain Cutoff Current
Drain to Source On Resistance
-0.005
-5
0.005
1
30
1
50
1
100
0.7
20
-1
5
-1
2
-1
mA
nA
pA
nA
鈩?/div>
TYP
J/SST111
MIN
-35
-3
-10
MAX
J/SST112
MIN
-35
-1
-5
MAX
J/SST113
MIN
-35
-3
V
MAX
UNIT
CONDITIONS
I
G
= -1碌A(chǔ), V
DS
= 0V
V
DS
= 5V, I
D
= 1碌A(chǔ)
I
G
= 1mA, V
DS
= 0V
V
DS
= 15V, V
GS
= 0V
V
GS
= -15V, V
DS
= 0V
V
DG
= 15V, I
D
= 10mA
V
DS
= 5V, V
GS
= -10V
I
G
= 1mA, V
DS
= 0V
Linear Integrated Systems
鈥?4042 Clipper Court 鈥?Fremont, CA 94538 鈥?Tel: 510 490-9160 鈥?Fax: 510 353-0261
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