J/SST201 SERIES
Linear Integrated Systems
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST201 SERIES
LOW CUTOFF VOLTAGE
HIGH GAIN
ABSOLUTE MAXIMUM RATINGS
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Current
Forward Gate Current
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
-40V
-40V
50mA
350mW
-65 to +150 擄C
-55 to +135 擄C
1
HIGH GAIN
N-CHANNEL JFET
V
GS(off)
鈮?/div>
1.5V
A
V
= 80 V/V
J SERIES
SST SERIES
SOT-23
TOP VIEW
TO-92
BOTTOM VIEW
D S G
1 2 3
S
D
1
3
2
G
ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated)
SYMBOL
BV
GSS
CHARACTERISTIC
Gate to Source
Breakdown Voltage
Gate to Source Cutoff
Voltage
J/SST201, 202
J/SST204
J/SST201
J/SST202
J/SST204
J/SST201
J/SST202
J/SST204
MIN
-40
-25
-0.3
-0.8
-0.3
0.2
0.9
0.2
-2
-2
2
J/SST201, 204
J/SST202
0.5
1
4.5
1.3
6
mS
pF
nV/鈭欻z
-1.5
-4
2
1
4.5
3
-100
pA
V
GS
= -20V, V
DS
= 0V
V
DG
= 10V, I
D
= 0.1mA
V
DS
= 15V, V
GS
= -5V
V
DS
= 15V, V
GS
= 0V,
f
= 1kHz
V
DS
= 15V, V
GS
= 0V,
f
= 1MHz
V
DS
= 10V, V
GS
= 0V,
f
= 1kHz
mA
V
DS
= 15V, V
GS
= 0V
V
V
DS
= 15V, I
D
= 10nA
TYP
MAX UNITS
CONDITIONS
I
G
= -1碌A(chǔ), V
DS
= 0V
V
GS(off)
I
DSS
I
GSS
I
G
I
D(off)
g
fs
C
iss
C
rss
e
n
Drain to Source
2
Saturation Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Forward
Transconductance
Input Capacitance
Reverse Transfer Capacitance
Noise Voltage
Linear Integrated Systems
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