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IXZ2210N50L Datasheet

  • IXZ2210N50L

  • N-Channel Enhancement Mode Linear 175MHz RF MOSFET

  • 248.35KB

  • 9頁(yè)

  • IXYS   IXYS

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IXZ210N50L & IXZ2210N50L
RF Power MOSFET
N-Channel Enhancement Mode Linear 175MHz RF MOSFET
Low Capacitance Z-MOS
TM
MOSFET Process
Optimized for Linear Operation
Ideal for Class AB & C, Broadcast & Communications Applications
Note: All data is per the IXZ210N50L single ended device unless otherwise noted.
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
c
= 25擄C
T
c
= 25擄C, pulse width limited by
T
JM
T
c
= 25擄C
T
c
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
飥?/div>
100A/碌s, V
DD
鈮?/div>
V
DSS
,
T
j
鈮?/div>
150擄C, R
G
= 0.2鈩?/div>
I
S
= 0
V
DSS
I
D25
=
=
500 V
10 A
Maximum Ratings
500
500
鹵20
鹵30
10
60
16
TBD
5
>200
IXZ210N50L IXZ2210N50L
V
V
V
V
A
A
A
mJ
V/ns
V/ns
940
470
10
0.16
0.29
W
W
W
C/W
C/W
max.
V
Features
150V (operating)
300 & 550 Watts
175MHz
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
T
c
= 25擄C, Derate 6.0W/擄C above
25擄C
T
c
= 25擄C
470
235
10
0.32
0.57
min.
typ.
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
V
GS
= 0 V, I
D
= 4 ma
V
DS
= V
GS
, I
D
= 250碌螒
V
GS
= 鹵20 V
DC
, V
DS
= 0
V
DS
= 0.8V
DSS
V
GS
=0
T
J
= 25C
T
J
=125C
500
3.5
4.95
6.5
鹵100
50
1
1.0
3.8
-55
+175
+175
-55
+ 175
300
4
V
nA
碌A(chǔ)
mA
鈩?/div>
S
擄C
擄C
擄C
擄C
g
鈥?/div>
Isolated Substrate
鈭?/div>
high isolation voltage (>2500V)
鈭?/div>
excellent thermal transfer
鈭?/div>
Increased temperature and power
鈥?/div>
cycling capability
IXYS RF Low Capacitance Z-MOS
TM
Process
Very low insertion inductance (<2nH)
hazardous materials
Advantages
V
GS
= 20 V, I
D
= 0.5I
D25
Pulse test, t
鈮?/div>
300碌S, duty cycle d
鈮?/div>
2%
V
DS
= 50 V, I
D
= 0.5I
D25
, pulse test
鈥?/div>
鈥?/div>
No beryllium oxide (BeO) or other
鈥?/div>
High Performance RF Package
鈥?/div>
Easy to mount鈥攏o insulators needed
(1) Thermal specifications are for the pack-
age, not per transistor
1.6mm(0.063 in) from case for 10 s

IXZ2210N50L 產(chǎn)品屬性

  • RF MOSFET

  • 500V

  • 10A

  • 360W

  • -55°C 到 +175°C

  • 8

  • 16ns

  • 360W

  • 1ohm

  • DE-275

  • DE-275X2

  • ?頻道

  • 470W

  • 175MHz

  • 20V

  • 500V

  • 383pF

  • 60A

  • 4.95V

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