= 5.1 m鈩?/div>
ISOPLUS 220
TM
Symbol
V
DSS
V
GS
I
D25
I
D90
I
S25
I
S90
I
D(RMS)
E
AS
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
F
C
Weight
Test Conditions
T
J
= 25擄C to 150擄C
Continuous
T
C
= 25擄C; Note 1
T
C
= 90擄C, Note 1
T
C
= 25擄C; Note 1, 2
T
C
= 90擄C, Note 1, 2
Package lead current limit
T
C
= 25擄C
T
C
= 25擄C
Maximum Ratings
55
鹵20
200
160
200
140
45
500
300
-55 ... +175
175
-55 ... +150
V
V
A
A
A
A
A
mJ
W
擄C
擄C
擄C
擄C
V~
G = Gate,
S = Source
* Patent pending
G
D
S
Isolated back surface*
D = Drain,
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Trench MOSFET
- very low R
DS(on)
- fast switching
- usable intrinsic reverse diode
l
Low drain to tab capacitance(<15pF)
l
Unclamped Inductive Switching (UIS)
rated
l
1.6 mm (0.062 in.) from case for 10 s
RMS leads-to-tab, 50/60 Hz, t = 1 minute
Mounting force
300
2500
11 ... 65 / 2.4 ...11 N/lb
2
g
Applications
Automotive 42V and 12V systems
- electronic switches to replace relays
and fuses
- choppers to replace series dropping
resistors used for motors, heaters, etc.
- inverters for AC drives, e.g. starter
generator
- DC-DC converters, e.g. 12V to 42V, etc.
l
Power supplies
- DC - DC converters
- Solar inverters
l
Battery powered systems
- choppers or inverters for motor control
in hand tools
- battery chargers
l
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
5.1 m鈩?/div>
m鈩?/div>
4
20
0.2
鹵200
V
碌A
mA
nA
R
DS(on)
V
GS(th)
I
DSS
I
GSS
V
GS
= 10 V, I
D
= 100 A, Note 3
V
GS
= 10 V, I
D
= I
D90
, Note 3
V
DS
= V
GS
, I
D
= 2 mA
V
DS
= V
DSS
V
GS
= 0 V
V
GS
=
鹵20
V
DC
, V
DS
= 0
T
J
= 25擄C
T
J
= 125擄C
2
4.0
Advantages
l
l
l
Easy assembly: no screws or isolation
foils required
Space savings
High power density
漏 2000 IXYS All rights reserved
98761 (11/00)
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