-55 ... +150
-55 ... +150
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C; T
J
= 25擄C to 150擄C
T
C
= 25擄C, pulse width limited by max. T
J
T
C
= 25擄C
G
V
V
mA
mA
W
擄C
擄C
擄C
擄C
g
D
S
D (TAB)
TO-252 AA
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
1.6 mm (0.063 in) from case for 5 s
300
0.8
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
2
4.5
鹵50
T
J
= 25擄C
T
J
= 125擄C
60
10
200
80
V
V
V
nA
碌A
碌A
鈩?/div>
Features
l
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 25
碌A
V
DS
= V
GS
, I
D
= 25
碌A
V
GS
= 鹵20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
International standard packages
JEDEC TO-251 AA, TO-252 AA
l
Low R
DS (on)
HDMOS
TM
process
l
l
Rugged polysilicon gate cell structure
Fast switching times
Applications
l
l
l
l
Level shifting
Triggers
Solid state relays
Current regulators
V
GS
= 10 V, I
D
= I
D25
Pulse test, t
鈮?/div>
300 ms, duty cycle d
鈮?/div>
2 %
漏 2001 IXYS All rights reserved
98812B (11/01)
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