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IXTT75N10 Datasheet

  • IXTT75N10

  • MegaMOS FET

  • 2頁

  • IXYS   IXYS

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上傳產(chǎn)品規(guī)格書

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High Current
Power MOSFET
N-Channel Enhancement Mode
V
DSS
IXTN 58N50
IXTN 61N50
500 V
500 V
I
D25
R
DS(on)
58 A 85 m鈩?/div>
鈩?/div>
鈩?/div>
61 A 75 m鈩?/div>
Preliminary Data
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
V
ISOL
50/60 Hz, RMS
t = 1 minute
t = 1s
M
d
Mounting torque
Terminal connection torque (M4)
Weight
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1.0 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C
Pulse width limited by T
JM
T
C
= 25擄C
-40 ... +150
150
-40 ... +150
IXTN
IXTN
IXTN
IXTN
58N50
61N50
58N50
61N50
Maximum Ratings
500
500
鹵20
鹵30
58
61
232
244
625
擄C
擄C
擄C
2500
3000
V~
V~
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
International standard package
Isolation voltage 3000V (RMS)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low drain-to-case capacitance
(<100 pF)
- reduced RFI
鈥?Low package inductance (< 10 nH)
- easy to drive and to protect
鈥?Aluminium Nitride Isolation
- increased current ratings
Applications
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
DC choppers
AC motor speed controls
DC servo and robot drives
Uninterruptible power supplies (UPS)
Switched mode and resonant mode
power supplies
V
V
G
S
miniBLOC, SOT-227 B
E153432
V
V
A
A
A
A
W
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C unless otherwise specified)
Min. Typ.
Max.
500
1.7
4.0
鹵200
500
2
58N50
61N50
85
75
V
V
nA
碌A
mA
m鈩?/div>
m鈩?/div>
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 5 mA
V
DS
= V
GS
,
I
D
= 12 mA
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300 碌s, duty cycle
鈮?/div>
2 %
T
J
= 25擄C
T
J
= 125擄C
Advantages
鈥?Easy to mount
鈥?Space savings
鈥?High power density
漏 1997 IXYS All rights reserved
95501B(4/97)

IXTT75N10 產(chǎn)品屬性

  • 30

  • 分離式半導體產(chǎn)品

  • FET - 單

  • MegaMOS™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 100V

  • 75A

  • 20 毫歐 @ 37.5A，10V

  • 4V @ 4mA

  • 260nC @ 10V

  • 4500pF @ 25V

  • 300W

  • 表面貼裝

  • TO-268-3，D³Pak（2 引線+接片），TO-268AA

  • TO-268

  • 管件

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