= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
J
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
Maximum Ratings
-500
-500
鹵20
鹵30
10P50
11P50
10P50
11P50
10P50
11P50
-10
-11
-40
-44
-10
-11
30
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
A
mJ
W
擄
C
擄
C
擄C
擄C
TO-247 AD (IXTH)
D
(TAB)
TO-268 (IXTT) Case Style
G
S
G = Gate
S = Source
D
(TAB)
D = Drain
TAB = Drain
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-247 AD
TO-268
(TO-247)
300
1.13/10 Nm/lb.in.
6
4
g
g
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
-500
0.054
-3.0
-0.122
鹵100
T
J
= 25擄C
T
J
= 125擄C
-200
-1
-5.0
V
%/K
V
%/K
nA
碌A
mA
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= -250
碌A
BV
DSS
Temperature Coefficient
V
DS
= V
GS
, I
D
= -250
碌A
V
GS(th)
Temperature Coefficient
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
V
GS
= -10 V, I
D
= 0.5 鈥?I
D25
10P50
11P50
R
DS(on)
Temperature Coefficient
0.90
鈩?/div>
0.75
鈩?/div>
0.6 %/K
94535F (7/02)
漏 2002 IXYS All rights reserved
IXYS
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