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IXTQ82N25P Datasheet

  • IXTQ82N25P

  • PolarHT Power MOSFET

  • 5頁(yè)

  • IXYS   IXYS

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PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Preliminary Data Sheet
IXTQ 82N25P
IXTT 82N25P
IXTK 82N25P
R
DS(on)
V
DSS
I
D25
= 250 V
= 82
A
鈩?/div>
= 35
m鈩?/div>
TO-264 (IXTK)
Symbol
V
DSS
V
DGR
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-264
TO-268
T
C
= 25擄C
External lead current limit
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
,
T
J
鈮?/div>
150擄C, R
G
= 4
鈩?/div>
T
C
= 25擄C
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Maximum Ratings
250
250
鹵20
82
75
250
60
40
1.0
10
500
-55 ... +150
150
-55 ... +150
300
V
V
V
A
A
A
A
mJ
J
V/ns
W
擄C
擄C
擄C
擄C
G = Gate
S = Source
D = Drain
TAB = Drain
G
D
S
(TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
1.13/10 Nm/lb.in.
5.5
10
5.0
g
g
g
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A(chǔ)
V
DS
= V
GS
, I
D
= 250碌A(chǔ)
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
250
2.5
5.0
鹵100
25
250
35
V
V
nA
碌A(chǔ)
碌A(chǔ)
m鈩?/div>
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99121B(04/04)
漏 2004 IXYS All rights reserved

IXTQ82N25P 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PolarHT™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 250V

  • 82A

  • 35 毫歐 @ 41A，10V

  • 5V @ 250µA

  • 142nC @ 10V

  • 4800pF @ 25V

  • 500W

  • 通孔

  • TO-3P-3，SC-65-3

  • TO-3P

  • 管件

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