鈩?/div>
T
C
= 25擄C
69
200
69
50
1.5
10
500
-55 ... +150
150
-55 ... +150
TO-268 (IXTT)
G
S
D = Drain
TAB = Drain
D (TAB)
G = Gate
S = Source
Features
!
!
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
TO-3P
TO-268
(TO-3P)
300
1.13/10 Nm/lb.in.
5.5
5.0
g
g
!
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(T
J
= 25擄C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
碌A
V
DS
= V
GS
, I
D
= 250碌A
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
鹵100
25
250
49
V
V
nA
碌A
碌A
m鈩?/div>
!
!
!
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
DS99078A(04/04)
漏 204 IXYS All rights reserved
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