= 1.0 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
74N20
68N20
74N20
68N20
74N20
68N20
Maximum ratings
200
200
鹵20
鹵30
74
68
296
272
416
300
150
-55 ... +150
1.13/10
10
6
300
V
V
V
V
A
A
A
A
W
W
擄C
擄C
擄C
Nm/lb.in.
g
g
擄C
G = Gate
S = Source
G
D
S
TO-247AD (IXTH)
D (TAB)
TO-264 AA (IXTK)
D (TAB)
-55 ... +150
D
= Drain
Tab = Drain
Features
聲
聲
聲
聲
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
International standard package
Fast switching times
Symbol
Test Conditions
Characteristic Values
Min. Typ.
200
2.0
4.0
鹵100
T
J
= 25擄C
T
J
= 125擄C
500
3
35
Max.
V
V
nA
碌A(chǔ)
mA
m鈩?/div>
(T
J
= 25擄C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 5 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
= 鹵20 V DC, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
Applications
聲
聲
聲
聲
Motor controls
DC choppers
Uninterruptable Power Supplies (UPS)
Switch-mode and resonant-mode
Advantages
聲 Easy to mount with one screw
(isolated mounting screw hole)
聲 Space savings
聲 High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300 ms, duty cycle d
鈮?/div>
2%
IXYS reserves the right to change limits, test conditions and dimensions.
95512C (12/97)
C2 - 14
漏 1998 IXYS All rights reserved
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