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IXTK62N25 Datasheet

  • IXTK62N25

  • High Current MegaMOSFET

  • 2頁

  • IXYS   IXYS

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Advance Technical Information
High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
IXTK 62N25
V
DSS
I
D25
R
DS(on)
= 250 V
= 62 A
鈩?/div>
= 35 m鈩?/div>
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
Test conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1.0 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
T
C
= 25擄C
T
C
= 25擄C
I
S
鈮?/div>
I
DM
, di/dt
鈮?/div>
100 A/碌s, V
DD
鈮?/div>
V
DSS
T
J
鈮?/div>
150擄C, R
G
= 2
鈩?/div>
T
C
= 25擄C
Maximum ratings
250
250
鹵20
鹵30
62
248
62
45
1.5
5
390
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
擄
C
擄
C
擄
C
擄
C
Nm/lb.in.
g
Features
G
D
S
TO-264 AA (IXTK)
D (TAB)
G = Gate
S = Source
D
= Drain
Tab = Drain
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
TO-264
300
0.7/6
10
鈥?/div>
Low R
DS (on)
HDMOS
TM
process
鈥?/div>
Rugged polysilicon gate cell structure
鈥?/div>
International standard package
鈥?/div>
Fast switching times
Applications
Symbol Test Conditions
(T
J
= 25擄C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
碌A(chǔ)
V
GS
= 鹵20 V DC, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25擄C
T
J
= 125擄C
Characteristic Values
Min. Typ.
Max.
250
2.0
4.0
鹵100
V
V
nA
鈥?/div>
鈥?/div>
鈥?/div>
Motor controls
DC choppers
Switched-mode power supplies
Advantages
鈥?/div>
鈥?/div>
鈥?/div>
50
碌A(chǔ)
2 mA
35 m鈩?/div>
Easy to mount with one screw
(isolated mounting screw hole)
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
鈮?/div>
300 ms, duty cycle d
鈮?/div>
2%
漏 2002 IXYS All rights reserved
98877A (02/02)

IXTK62N25 產(chǎn)品屬性

  • 30

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • MegaMOS™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 250V

  • 62A

  • 35 毫歐 @ 31A，10V

  • 4V @ 250µA

  • 240nC @ 10V

  • 5400pF @ 25V

  • 390W

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264

  • 管件

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