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IXTK33N50 Datasheet

  • IXTK33N50

  • High Current MegaMOSFET

  • 4頁

  • IXYS   IXYS

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High Current
MegaMOS
TM
FET
N-Channel Enhancement Mode
Preliminary data
IXTK 33N50
V
DSS
= 500 V
I
D (cont)
= 33 A
R
DS(on)
= 0.17
鈩?/div>
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
T
J
Test conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1.0 M鈩?/div>
Continuous
Transient
T
C
= 25擄C
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
Maximum ratings
500
500
鹵20
鹵30
33
132
416
-55 ... +150
150
-55 ... +150
V
V
V
V
TO-264 AA
G
D (TAB)
D
S
A
A
W
擄C
擄C
擄C
G = Gate
S = Source
D = Drain
TAB = Drain
T
JM
stg
M
d
Weight
Mounting torque
1.13/10 Nm/lb.in.
10
300
g
擄C
Features
鈥?Low R
DS (on)
HDMOS
TM
process
鈥?Rugged polysilicon gate cell
structure
鈥?International standard package
鈥?Fast switching times
Applications
鈥?Motor controls
鈥?DC choppers
鈥?Uninterruptable Power Supplies
(UPS)
鈥?Switch-mode and resonant-mode
Advantages
鈥?Easy to mount with one screw
(isolated mounting screw hole)
鈥?Space savings
鈥?High power density
Max lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
Min.
500
0.087
2.0
-0.25
鹵100
T
J
= 25擄C
T
J
= 125擄C
200
3
0.17
4.0
Typ.
Max.
V
%/K
V
%/K
nA
碌A(chǔ)
mA
鈩?/div>
(T
J
= 25擄C unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 5 mA
BV
DSS
temperature coefficient
V
DS
= V
GS
,
I
D
= 250
碌A(chǔ)
V
GS(th)
temperature coefficient
V
GS
=
鹵20
V DC, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 I
D25
IXYS reserves the right to change limits, test conditions, and dimensions.
95513C (4/97)
漏 2000 IXYS All rights reserved
1-4

IXTK33N50 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 500V

  • 33A

  • 170 毫歐 @ 500mA，10V

  • 4V @ 250µA

  • 250nC @ 10V

  • 4900pF @ 25V

  • 416W

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264AA

  • 管件

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