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IXTK21N100 Datasheet

  • IXTK21N100

  • High Voltage MegaMOSTMFETs

  • 4頁

  • IXYS   IXYS

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High Voltage
MegaMOS
TM
FETs
IXTK 21N100
IXTN 21N100
V
DSS
= 1000 V
= 21 A
I
D25
R
DS(on)
= 0.55
鈩?/div>
N-Channel, Enhancement Mode
TO-264 AA (IXTK)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
M
d
Weight
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
ISOL
鈮?/div>
1 mA
t = 1 min
t=1s
300
-
-
0.9/6
-
10
Test Conditions
T
J
= 25擄C to 150擄C
T
J
= 25擄C to 150擄C; R
GS
= 1 M鈩?/div>
Continuous
Transient
T
C
= 25擄C, Chip capability
T
C
= 25擄C, pulse width limited by T
JM
T
C
= 25擄C
Maximum Ratings
IXTK
IXTN
1000
1000
鹵20
鹵30
21
84
500
1000
1000
鹵20
鹵30
21
84
520
150
-55 ... +150
-
2500
3000
V
V
V
V
A
A
W
擄C
擄C
擄C
擄C
V~
V~
S
S
D
G
S
G
D
S
D (TAB)
miniBLOC, SOT-227 B
E153432
D
G
S
-55 ... +150
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
International standard packages
JEDEC TO-264, epoxy meet UL 94 V-0
flammability classification
miniBLOC, (ISOTOP-compatible) with
Aluminium nitride isolation
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25擄C, unless otherwise specified)
min. typ. max.
1000
2
4.5
鹵200
T
J
= 25擄C
T
J
= 125擄C
500
2
0.55
V
V
nA
碌A(chǔ)
mA
鈩?/div>
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GH(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 6 mA
V
DS
= V
GS
, I
D
= 500
碌A(chǔ)
V
GS
=
鹵20
V
DC
, V
DS
= 0
V
DS
= 0.8 鈥?V
DSS
V
GS
= 0 V
Advantages
Easy to mount
Space savings
High power density
92808I(5/97)
V
GS
= 10 V, I
D
= 0.5 鈥?I
D25
Pulse test, t
鈮?/div>
300
碌s,
duty cycle d
鈮?/div>
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
漏 2000 IXYS All rights reserved
1-4

IXTK21N100 產(chǎn)品屬性

  • 25

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • MegaMOS™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 1000V（1kV）

  • 21A

  • 550 毫歐 @ 500mA，10V

  • 4.5V @ 500µA

  • 250nC @ 10V

  • 8400pF @ 25V

  • 500W

  • 通孔

  • TO-264-3，TO-264AA

  • TO-264AA

  • 管件

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